PR-NIL210 - Photoresist / Alfa Chemistry

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PR-NIL210

PR-NIL210

Nanoimprint Lithography Resists

Catalog: PR-SMP-081

Product Name	PR-NIL210
Film Thickness	0.1, 0.2, 0.5 μm, customizable to 12.5 μm (3000 rpm)
Additive	Fluorinated additive
Recommended working stamp material	Porous soft stamp
Package	250 ml, 500 ml, customized.

Description

PR-NIL210 is a purely organic photo-curable nanoimprint technology (NIL) resist with excellent curing and nanoimprint performance, which acts as an etch mask in pattern transfer processes. In soft UV-NIL processes, it is mainly used for gas-permeable stamp materials.

Unique Features

Excellent curing properties, even under air (presence of oxygen).
Compatibility to polydimethylsiloxane (PDMS) working stamps for soft-NIL.
Outstanding dry etch stability against various substrates like silicon, quartz, or aluminum.
Purely organic resist, residue-free removable with oxygen plasma possible after curing.

Film Characteristics

Brilliant film forming characteristics.
Brilliant film stability.
Brilliant film thickness uniformity.

Film thickness freely adjustable from sub 100 nm rage up to several microns (Standard: 100 nm, 200 nm, 500 nm)
Good storage stability over several hours.

Photo-Nanoimprinting

Excellent imprint and photo-curing performance under ambient conditions as well as in the presence of air.
Outstanding compatibility to PDMS soft NIL stamps.
Suitable for the fabrication of micro- and nanoimprinted structures.
Enables high volume production by extended PDMS stamp longevity.
Photo-curing by light-emitting diode (LED) or Hg bulb exposure.

Dry Etching Characteristics and Stripping

Excellent etching characteristics for many demanding substrates like sapphire, silica, etc.
Facile removal of residual cured resist material by wet-chemical stripping or by oxygen plasma stripping.

Applications

Etch mask for pattern transfer processes (dry and wet etching).
Fabrication of nanostructures for LEDs, photonic crystals, patterned sapphire substrates (PSS), microelectronics, organic electronics (OLED, OPV, OTFT), data storage (bit patterned media), lift-off applications in combination with e.g. LOR (MCC, USA).

Recommended Process Parameters

Process step	Process parameter
Spin coating	3000 rpm for 30 s
Prebake	60 °C for 180 s
Imprint temperature	Room temperature
Imprint pressure	> 100 mbar
Radiation intensity	100 nm: 100 mW cm^-2 200 nm: 50 mW cm^-2 500 nm: 50 mW cm^-2
Radiation source	Option 1: broad band Option 2: LED (365-405 nm)

As a manufacturer of photoresists, Alfa Chemistry has been operating for many years. We offer a wide range of photoresists for NIL technologies. In terms of different nanoimprint lithography processes, our products are classified into UV-NIL resists and T-NIL resists. If you have any questions, please feel free to contact us. We stand ready to assist you.

Please kindly note that our products and services are for research use only.