130209-82-4 Purity
98%
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Specification
Xanthan gum was modified with acrylamide and trimethylolpropane triglycidyl ether (TTE) to improve thermal stability and adsorption performance. The modified xanthan gum (XGTTE) was characterized by Fourier transform infrared (FT-IR) spectroscopy, X-ray diffraction pattern (XRD), differential scanning calorimetry (DSC) and scanning electron microscopy (SEM). Characteristic peaks at 3449, 1655, 1611 and 1420 cm FT-IR confirmed the modification. XGTTE crystals grew well after adding TTE. XRD and DSC data showed that XGTTE enhanced its thermal stability. SEM analysis showed that the grafting introduced.The microstructure changed significantly, making it porous and causing adsorption of crystal violet (CV) flocculation. The CV adsorption capacity of hydrogels with different doses of TTE (XGTTE2, XGTTE3, XGTTE4, XGTTE5 and XGTTE6) ranged from 28.13 to 35.12 mg/g. In addition, the adsorption capacity, thermal stability and swelling properties of XGTTE4 were the best.
The modified xanthan gum was prepared in a reactor equipped with a mechanical stirrer, a reflux condenser, a thermometer, and Ngas inlet and outlet pipes. XG (1 g) was dissolved in 150 mL of distilled water and stirred continuously at room temperature for 60 min. Then, AM (15 g) and 260, 390, 520, 650 and 780 μL of TTE were added to the XG solution in sequence, stirred, and saturated with Nto to remove dissolved oxygen. The temperature was maintained at 70 °C, and 0.3 g of KPS was added and reacted for 4 h to initiate the graft copolymer. The modified XG was precipitated using ethanol. The precipitate was filtered, washed thoroughly with clean water, stirred at high speed for 3 times in an ethanol/water mixture (4:1, v/v), and then soaked in an ethanol/water mixture (4:1, v/v) for 24 h. The modified XG was collected by filtration and dried at 50 °C. Finally, the dried modified XG was ground and pulverized and then filtered through a 250 μm filter membrane. This was used as XGTTE. For the modified XG, the TTE doses were 260 μL (2%, w/w), 390 μL (3%, w/w), 520 μL (4%, w/w), 650 μL (5%, w/w), and 780 μL (6%, w/w), which were recorded as XGTTE2, XGTTE3, XGTTE4, XGTTE5, and XGTTE6, respectively.
Low voltage operable organic field effect transistors (OFETs) were fabricated using low temperature curing high-k polymer cyanoethyl pullulan (CEP) as gate insulator and trimethylolpropane triglycidyl ether (TTE) as cross-linker. Using this cross-linker, the gate insulator exhibits low leakage current and high dielectric constant of 14.8-16 and, most importantly, can be cured at low temperatures around 100°C, which is compatible with most plastic substrates for future plastic electronics. Due to the surface alignment of well-stacked pentacene domains, a good semiconductor-dielectric interface was obtained, resulting in excellent transistor performance with one of the highest mobilities of around 6 cmVs, an on/off current ratio (I/I) of 10, and a steep subthreshold (SS) of 0.095 V dec. The high mobility was found to be closely related to the surface C^N dipole density rather than other possibilities such as dielectric roughness and surface energy. The initial growth of the semiconductor was also studied and correlated with the influencing variables.
Cross-linkable solutions were prepared in a co-solvent (N,N-dimethylformamide:acetonitrile 1:1) with 5 wt% CEP and different amounts of TTE. The solutions were spin-coated onto p-type (for MIS capacitors) or heavily doped n-type silicon wafers (n Si, for OFETs) and then baked in a vacuum oven at 100 C for 3 h. The baked films were named CEPE10, CEPE30, CEPE50, and CEPE70 for TTE/CEP weight ratios of 10%, 30%, 50%, and 70%, respectively. A shadow mask patterned with a 60 nm thick pentacene active layer was deposited as an organic semiconductor on the dielectric film at a deposition rate of 0.2-0.3 Å, a substrate temperature of 50 C, and a chamber pressure of 10 torr in a moderate organic molecular beam deposition system. For the MIS capacitors, gold top (or bottom) electrodes were deposited by shadow mask evaporation to form a circular spot area of 8.02 × 10 cm Gold source/drain electrodes were deposited by shadow mask with a channel length (L) of 150 mm and a width (W) of 1500 mm to form a top contact/bottom gate geometry.
The IUPAC name of Trimethylolpropane triglycidyl ether is 2-[2,2-bis(oxiran-2-ylmethoxymethyl)butoxymethyl]oxirane.
The molecular weight of Trimethylolpropane triglycidyl ether is 302.36.
Trimethylolpropane triglycidyl ether is primarily used as a crosslinking agent which provides chemical and mechanical resistance.
Some synonyms for Trimethylolpropane triglycidyl ether are Triglycidyl trimethylolpropane ether and 1,1,1-Trimethylolpropane triglycidyl ether.
Trimethylolpropane triglycidyl ether is used in the synthesis of azidated Trimethylolpropane triglycidyl ether for the preparation of polyether polyol based hyperbranched polyurethanes.
Trimethylolpropane triglycidyl ether appears as a colorless to yellow liquid.
The density of Trimethylolpropane triglycidyl ether is 1.157 g/mL at 25 °C.
Trimethylolpropane triglycidyl ether can be coated on polycarbonated chips for improving chemical resistance from different organic solvents.
Cross-linking of Trimethylolpropane triglycidyl ether can be done with poly(4-venylphenol) for the preparation of organic field effect transistors (OFETs).
Trimethylolpropane triglycidyl ether reduces viscosity but retains a high epoxide level, imparts hardness and toughness to epoxide polymers, and improves the solubility/compatibility characteristics of highly aromatic epoxy systems.