131391-65-6 Purity
97%
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Specification
A group of industrial vat orange dyes (including vat orange 1, vat orange 3 and vat orange 9) were used to prepare organic field effect transistors (OFETs). The results showed that these vat dyes with quinone moieties showed potential for future organic electronic applications.
Fabrication of OFETs based on orange dyes
· The OFET device used in this study featured a staggered bottom gate-top contact architecture, incorporating a 16-17 nm thick inorganic dielectric layer of aluminum oxide (AlOx) and a thin organic dielectric layer of tetratetracontane (TTC). All OFET devices were fabricated with anodized aluminum gate electrodes, creating aluminum oxide electrochemically. The aluminum for these gate electrodes had a purity of 99.999% and was deposited at a rate of approximately 4-5 nm/s. An anodization voltage of 10 V produced the aluminum oxide layer of about 16-17 nm.
· This layer was then passivated with a 20 nm vacuum-deposited layer of TTC, which was annealed at 60 °C for 1 hour under vacuum, before depositing an 80 nm thick layer of vat orange semiconductor without breaking the vacuum. Each of the three vat orange dyes was deposited at a rate of 0.1 Å/s without heating the substrate. Vat orange 9 demonstrated higher thermal stability, sublimating at around 320-330 °C under a typical pressure of 1 × 10-6 mbar, while vat orange 1 sublimated at 240-250 °C and vat orange 3 at 225-235 °C.
· The source and drain electrodes were made of aluminum (100 nm thick), LiF/Al (1 nm/99 nm thick), and gold (100 nm thick) for each vat orange dye, as the suitable metal contacts for each semiconductor were not known in advance.