1199236-64-0 Purity
98%
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Specification
Niobium monoxide (NbO) can be a potential candidate material for polysilicon gate in metal oxide semiconductor field effect transistors. In this work, NbO thin films were prepared by sputter deposition in a DC magnetron sputtering system at room temperature and used as low work function gate electrodes for n-channel metal oxide semiconductor field effect transistors (NMOSFETs) with a measured value of 4.18±0.05 eV.
Preparation method of NbO thin films
· NbO films are deposited through sputtering in a DC magnetron sputtering system at room temperature. A Nb target with a purity of 99.95% is used along with a mixture of Ar and O2 gases. The flow of Ar and O2 gases is individually controlled by mass flow controllers, while the total gas pressure is maintained at approximately 6 mTorr during film deposition.
· It is crucial to condition the chamber before film deposition as the resulting composition of the NbOx film is highly sensitive to chamber conditions. Precise control of the gas ratio and sputtering power is necessary to achieve a single-phase film while preventing significant content of Nb, NbO2, and Nb2O5 in the film.
· The NbO gate electrode exhibits stability with gate dielectrics even up to a 1000 °C anneal and can be etched using conventional etch tools with fluorine-based etchants. When paired with HfO2 gate dielectrics, the etch selectivity is high, allowing the etch process to be halted at the HfO2 layer.
This work uses matrix-isolated infrared spectroscopy to study the coordination and activation of niobium oxide molecules, including niobium monoxide (NbO) and niobium dioxide (NbO2), with carbon dioxide. The results show that niobium monoxide molecules are able to activate carbon dioxide to form NbO2 (η1-CO) in solid neon. This CO2 activation process is thermodynamically exothermic and kinetically facile. In contrast, niobium dioxide molecules react with carbon dioxide to form four niobium dioxide carbon dioxide complexes that exhibit three different CO2 coordination modes.
Experimental methods
· The experimental methods involved preparing niobium monoxide and dioxide molecules through pulsed laser evaporation of a bulk niobium oxide target using a Nd:YAG laser. The laser was focused onto a rotating niobium oxide target through a CsI window cooled to 4 K by a helium refrigerator. The metal oxide species were deposited with CO2/Ne mixtures onto the CsI window at a rate of approximately 4 mmol/h. The bulk Nb2O5 target was prepared from sintered metal oxide powder.
· The infrared absorption spectra were recorded using a liquid nitrogen cooled detector with a high-resolution spectrometer. Isotopically labeled CO2 gases were used in the experiments. The samples were annealed to different temperatures and subjected to broad band irradiation using a tungsten lamp or a high-pressure mercury arc lamp with glass filters.
The molecular formula of niobium oxide is Nb2O5.
Some synonyms for niobium oxide are Niobium(V) oxide, Niobium pentoxide, dioxoniobiooxy(dioxo)niobium.
The molecular weight of niobium oxide is 265.81 g/mol.
The IUPAC name of niobium oxide is dioxoniobiooxy(dioxo)niobium.
The InChI of niobium oxide is InChI=1S/2Nb.5O.
The InChIKey of niobium oxide is ZKATWMILCYLAPD-UHFFFAOYSA-N.
The canonical SMILES of niobium oxide is O=[Nb](=O)O[Nb](=O)=O.
The CAS number of niobium oxide is 1313-96-8.
Niobium oxide is described as white crystals that are insoluble in water.
Niobium oxide has 5 hydrogen bond acceptor counts.