1203579-29-6 Purity
97%
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Specification
Hafnium titanate (HfTiO4) is used as control rods in nuclear reactors due to its good nuclear and mechanical properties and low thermal expansion. This work systematically studies reliable data on heat capacity and thermal expansion of HfTiO4. The heat capacity in the temperature range of 298-800 K and the thermal expansion characteristics in the temperature range of 298-1973 K were measured using DSC and HTXRD, respectively.
Thermophysical properties of hafnium titanate
· Thermal expansion characteristics of HfTiO4 were determined by analyzing the lattice parameters along the a, b, and c axes at temperatures ranging from 298 K to 1973 K using HT-XRD. The mean linear thermal expansion coefficients for the a, b, and c axes in this temperature range were calculated to be 16.39 × 10-6 K-1, 5.23 × 10-6 K-1, and 8.65 × 10-6 K-1, respectively. Below 1073 K, negative thermal expansion was observed along the b-axis.
· This study presents the experimental values of the heat capacity data for HfTiO4 for the first time and also reports the thermal expansion characteristics of this compound at temperatures exceeding 1673 K.
Hafnium titanate (HfTiO4) was prepared by magnetron co-sputtering, and the hardness, microstructure, and optical properties of as-deposited and annealed HfTiO4 films were discussed. The results show that the deposited coating is nanocrystalline with HfTiO4 structure, and the deposited film consists of grains of about 4-12 nm in size. After additional annealing, the grain size increases to 16 nm. In addition, the hardness of the annealed film is 3 times lower than that of the as-deposited film (about 9 GPa). For optical properties, after annealing, the refractive index increases from 2.03 to 2.16, while the extinction coefficient increases from 10-4 to 10-3.
Preparation procedure of HfTiO4 thin films
· In the deposition process, metallic Ti and Hf targets were simultaneously sputtered in oxygen with a purity of 99.999%. The oxygen pressure during deposition was maintained below 10-2 mbar, and the magnetron utilized DPS unipolar pulse power supplier with a voltage amplitude of up to 1800 V. Thin films approximately 650 nm thick were then deposited onto silica (SiO2) substrates.
· Following deposition, the samples underwent additional annealing at 800 °C in a Nabertherm tubular furnace with a quartz tube while being exposed to synthetic air flow. The choice of annealing temperature for the thin films was specifically made to potentially observe a transformation from the TiO2-anatase phase to the TiO2-rutile phase.