3650-73-5 Purity
96%
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Specification
Zinc oxide (ZnO) nanoparticles were modified by forming a thin film on the surface of nanoparticles using perfluorophosphonic acids with different phosphonic acid functional groups [including 12-pentafluorophenoxydodecylphosphonic acid (PFPDPA), 2,3,4,5,6-pentafluorobenzylphosphonic acid (5FBPA), and (1H,1H,2H,2H-perfluorododecyl)phosphonic acid (F21DDPA)]. The results showed that modification of ZnO nanoparticles with perfluorophosphonic acid increased the stability of the phosphonic acid adsorbed on the surface.
Preparation of perfluorophosphonic acids modified ZnO NPs
· To prepare the adsorbed molecules, 0.35 g of ZnO nanoparticles were dispersed in 30 mL of THF through sonication at a temperature of 33 ± 2 °C for a duration of 15 minutes.
· Next, 26.6 mM of each organic acid (PFPDPA, 5FBPA, and F21DDPA) was added to 6 mL of THF and sonicated for 30 minutes until fully dissolved.
· The resulting 30 mL of ZnO solution was then combined with the 6 mL of acid solution and sonicated together for another 15 minutes. Following sonication, the mixtures were stirred for 48 hours, and after 24 hours, they were allowed to evaporate at room temperature.
· The dried samples were subsequently dispersed in 15 mL of THF and sonicated for an additional 15 minutes. The modified nanoparticles were then collected using a vacuum centrifuge (operating at <20 mbar, 1400 rpm for 25 minutes) and left to dry overnight under a fume hood.
The hole transport layer (HTL) made of 2,3,4,5,6-pentafluorobenzylphosphonic acid (F5BnPA) combined with graphene oxide (GO) and molybdenum oxide (MoOx) solution can provide continuous work function (WF) regulation by controlling the concentration of F5BnPA. The addition of F5BnPA can effectively adjust the HTL WF to obtain high open circuit voltage organic solar cells (OSCs).
Devices fabrication with GO:F5BnPA and MoOx:F5BnPA HTLs
· Different amounts of F5BnPA were added into the two solutions (GO and MoOx solution) to form blend solutions with certain concentrations, respectively. Different hole transport layers were prepared by spin-coating the mixed solutions onto clean ITO substrates at 4000 rpm for 40 s.
PEDOT:PSS was applied to the cleaning treated ITO using a spin-coating technique at 4000 rpm for 40 seconds, then annealed at 120 °C for 20 minutes.
· The active layer was formed by spin-coating a blend solution of SMPV1:PC71BM, mixed in a weight ratio of 1:0.8, onto the ITO/HTL substrates within a glove box at 2000 rpm. This blend solution was created using chloroform as the solvent.
· For the OSCs, calcium (20 nm) and aluminum (100 nm) were thermally evaporated onto the active layer through a shadow mask at a pressure of 10^-6 Torr. In the case of hole-only devices, molybdenum oxide (MoOx) at 10 nm and silver at 100 nm were thermally evaporated.