Hafnium tert-butoxide

• CAS: 2172-02-3
• Catalog Number: ACM2172023-2
• Category: Micro/NanoElectronics
• Molecular Weight: 470.9
• Molecular Formula: C16H36HfO4
• Synonyms: Tetrakis(tert-butoxy)hafnium
• IUPAC Name: Hafnium(4+);2-methylpropan-2-olate
• Canonical SMILES: CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-].[Hf+4]
• InChI: InChI=1S/4C4H9O.Hf/c4*1-4(2,3)5;/h4*1-3H3;/q4*-1;+4
• InChI Key: WZVIPWQGBBCHJP-UHFFFAOYSA-N
• Boiling Point: 90 °C/5 mmHg (lit.)
• Melting Point: 2 °C
• Flash Point: 83 °F
• Density: 1.166 g/mL at 25 °C (lit.)
• Solubility: Soluble in hydrocarbons
• Appearance: Liquid
• Complexity: 25.1
• Exact Mass: 472.20792
• Heavy Atom Count: 21
• Hydrogen Bond Acceptor Count: 4
• Hydrogen Bond Donor Count: 0
• Monoisotopic Mass: 472.20792
• Rotatable Bond Count: 0
• Topological Polar Surface Area: 92.2 Ų

Custom Q&A

What is the molecular formula of Hafnium tert-butoxide?

The molecular formula of Hafnium tert-butoxide is C16H36HfO4.

What is the melting point of Hafnium tert-butoxide?

The melting point of Hafnium tert-butoxide is 2℃.

What is the density of Hafnium tert-butoxide at 25°C?

The density of Hafnium tert-butoxide at 25°C is 1.166 g/mL.

How does Hafnium tert-butoxide react with moisture/water?

Hafnium tert-butoxide reacts slowly with moisture/water.

What are the exposure limits for Hafnium tert-butoxide according to ACGIH and NIOSH?

ACGIH: TWA 0.5 mg/m3, NIOSH: IDLH 50 mg/m3; TWA 0.5 mg/m3.

How sensitive is Hafnium tert-butoxide to moisture and light?

Hafnium tert-butoxide is both moisture sensitive and light sensitive.

What is the boiling point of Hafnium tert-butoxide?

The boiling point of Hafnium tert-butoxide is 90°C at 5 mm Hg.

In what form does Hafnium tert-butoxide exist?

Hafnium tert-butoxide exists in liquid form.

What are the hazard codes associated with Hafnium tert-butoxide?

The hazard codes for Hafnium tert-butoxide include Xi.

What are the uses of Hafnium tert-butoxide?

Hafnium tert-butoxide is used as a precursor for the deposition of HfO2 and other hafnium doped thin films suitable for semiconductor devices.