66032-54-0 Purity
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Specification
Reference: [1]Haym, Isabell; Huynh, Tri H. V.; Hansen, Stinne W.; Pedersen, Martin H. F.; Ruiz, Josep A.; Erichsen, Mette N.; Gynther, Mikko; Bjørn-Yoshimoto, Walden E.; Abrahamsen, Bjarke; Bastlund, Jesper F.; Bundgaard, Christoffer; Eriksen, Anette L.; Jensen, Anders A.; Bunch, Lennart
[ChemMedChem, 2016, vol. 11, # 4, p. 403 - 419]
[2]Current Patent Assignee: GUANGDONG HEC TECHNOLOGY HOLDING CO., LTD. - WO2019/62802, 2019, A1
Location in patent: Paragraph 00332
[3]Current Patent Assignee: JIANGSU UNIVERSITY - CN106543095, 2017, A
Location in patent: Paragraph 0020; 0027; 0028; 0029
[4]Location in patent: experimental part
Shastri; Pedgaokar; Selulkar; Jadhav
[Journal of the Indian Chemical Society, 2008, vol. 85, # 5, p. 574 - 576]
Reference: [1]Udd, Sandra; Jokela, Reija; Franzén, Robert; Tois, Jan
[Tetrahedron Letters, 2010, vol. 51, # 7, p. 1030 - 1033]